EPC2378 25V, 410µΩ eGaN Enters Mass Production for High-Density DC–DC Conversion

Why It Matters

The EPC2378 enables designers to push switching frequencies higher while cutting losses, delivering greater power density and efficiency for rapidly growing AI and data‑center power‑supply markets.

Key Takeaways

• EPC2378 25 V eGaN FET enters mass production
• 410 µΩ typical R_DS(on) enables ultra‑low conduction loss
• Handles 101 A continuous current in 3.3 mm × 3.3 mm PQFN
• Targets AI, data‑center, telecom power‑density markets
• Development board EPC90185 priced at $226 for rapid evaluation

Pulse Analysis

EPC’s latest eGaN offering, the EPC2378, marks a significant step forward for gallium‑nitride power devices. By delivering a typical on‑resistance of just 410 µΩ and a low R_DS(on)×Q_G metric, the transistor minimizes conduction losses even at high switching speeds. Its 25‑volt rating and ability to handle 101 amps continuously, all within a compact 3.3 mm × 3.3 mm PQFN footprint, make it ideal for secondary‑side synchronous rectification in 48 V‑8 V and 5 V LLC converters. Compared with traditional silicon MOSFETs, the EPC2378 offers superior thermal performance and enables designers to shrink converter size while boosting efficiency.

The timing aligns with surging demand for power‑dense solutions in AI accelerators, hyperscale data‑center servers, telecom base stations, and advanced industrial equipment. These applications require converters that operate at higher frequencies to reduce magnetic component size, yet they cannot tolerate the increased switching losses typical of silicon devices. eGaN’s fast switching and low gate charge allow EPC’s transistor to meet these constraints, delivering up to 10‑15% efficiency gains in real‑world tests. As the industry pivots toward edge computing and higher‑performance AI workloads, the ability to pack more power into smaller footprints becomes a competitive differentiator.

To smooth the path to adoption, EPC introduced the EPC90185 development board, priced at $226, which integrates two EPC2378 transistors with a half‑bridge driver and measurement points. This turnkey platform lets engineers validate thermal performance, switching behavior, and system‑level efficiency without extensive board redesign. With the device already available through Digi‑Key and Mouser at $2.40 per unit for 3 K‑unit reels, EPC is positioning the EPC2378 as a cost‑effective, high‑performance solution for next‑generation power architectures.