Finwave Highlights New Switch Range and X-Microwave Partnership

Why It Matters

The expanded GaN‑on‑Si switch line gives system designers higher power and frequency capability in a compact, silicon‑based form factor, accelerating the rollout of next‑generation radar, EW and 5G/6G infrastructure. Partnering with X‑Microwave streamlines the path from evaluation to deployment, shortening time‑to‑market for defense and telecom OEMs.

Key Takeaways

• Finwave unveils eight GaN‑on‑Si RF switches at IMS2026.
• New switches support up to 40 W CW power in 4 × 4 mm QFN.
• FW2109 covers 300 MHz‑18 GHz, targeting electronic warfare.
• X‑Microwave now offers Finwave’s FW2001‑2003 as plug‑in blocks.
• Compact GaN‑on‑Si switches reduce SWaP‑C for aerospace defense.

Pulse Analysis

GaN‑on‑silicon technology is gaining traction as a cost‑effective alternative to traditional GaN‑on‑silicon‑carbide solutions, leveraging mature silicon fabs to deliver high‑frequency performance at scale. Finwave’s latest switch family capitalizes on this trend, offering a blend of high continuous‑wave power, ultra‑low insertion loss, and rapid switching speeds within a tiny QFN footprint. These attributes are especially valuable for modern radar, electronic‑warfare, and high‑throughput communications systems that demand both power density and compactness.

The new lineup includes the FW2109 SPDT switch, which spans 300 MHz to 18 GHz and handles 6 W CW and 12 W pulse power, positioning it for broadband EW and satellite links. Higher‑power models such as the FW2110 and FW2198 push continuous‑wave capabilities to 40 W and 20 W respectively, while maintaining low loss, a critical factor for signal‑chain efficiency in drone and counter‑drone platforms. By packaging these capabilities in a 4 × 4 mm QFN, Finwave addresses the stringent SWaP‑C constraints of aerospace and defense programs, enabling designers to integrate more functionality without sacrificing size or weight.

The strategic alliance with X‑Microwave extends Finwave’s market reach by offering its switches as ready‑to‑use X‑MWblocks. This modular approach simplifies RF prototyping, allowing engineers to evaluate performance quickly and transition to volume production with fewer design iterations. As 5G, emerging 6G, and advanced radar ecosystems mature, the combined Finwave‑X‑Microwave solution provides a faster, lower‑cost pathway for OEMs to adopt GaN‑on‑Si technology, potentially reshaping the competitive landscape of high‑frequency RF components.