Fraunhofer IAF to Show GaN4EmoBil Module at PCIM

Why It Matters

The demo proves GaN technology can enable lightweight, cost‑effective bidirectional chargers, turning EVs into grid‑level storage assets and accelerating the transition to flexible, low‑carbon energy systems.

Key Takeaways

• Fraunhofer IAF demoing 800 V GaN module for bidirectional EV charging at PCIM
• Off‑board charger delivers 3 kW, weighs 5.7 kg, volume 8.3 L
• GaN devices operate up to 920 V battery voltage, promising higher efficiency
• Bidirectional charging lets EVs store grid energy and discharge during peaks
• Project targets scaling GaN performance while keeping costs comparable to silicon

Pulse Analysis

Gallium nitride (GaN) is reshaping power electronics by delivering higher switching speeds and efficiency than traditional silicon, especially in high‑voltage applications. At PCIM, Fraunhofer IAF’s GaN4EmoBiL module demonstrates these advantages in a real‑world EV charging context, using 1200 V GaN devices on an insulating substrate. The technology’s ability to handle up to 920 V battery voltage while maintaining a compact footprint underscores its readiness for next‑generation charging infrastructure, where space, weight, and thermal performance are critical constraints.

The showcased off‑board charger targets a niche between low‑power home chargers and high‑power on‑board systems. Delivering 3 kW of bidirectional power, the unit weighs just 5.7 kg and occupies 8.3 L, making it portable enough for residential or fleet use. Its dual plug options—CCS for EVs and Schuko for standard outlets—provide flexibility absent in fixed on‑board chargers, which typically cost more due to larger silicon‑based components. While charging speed is modest compared with 11‑22 kW on‑board solutions, the trade‑off favors reduced installation complexity and the added benefit of vehicle‑to‑grid (V2G) capability.

Beyond the demonstrator, the project signals a broader industry shift toward leveraging EVs as distributed energy resources. By enabling high‑reverse‑voltage bidirectional flow, GaN‑based chargers can help balance grid supply during renewable oversupply and support peak‑load shaving. Fraunhofer’s roadmap—scaling voltage classes, current capacity, and wafer size while targeting silicon‑level pricing—could democratize high‑performance power electronics, accelerating adoption across automotive, renewable integration, and industrial sectors.