GaN Ka-Band QFN Packaged Power Amplifier:  NPQ2107-SM

GaN Ka-Band QFN Packaged Power Amplifier: NPQ2107-SM

Microwave Journal
Microwave JournalApr 30, 2026

Why It Matters

The amplifier offers a rare combination of high output, efficiency and linearity at Ka‑band, enabling more capable and cost‑effective satellite and terrestrial backhaul networks.

Key Takeaways

  • 17 W saturated output across 27.5‑31 GHz Ka‑band
  • 29% power‑added efficiency with 22 dB linear gain
  • Linear 9 W output at –30 dBc spectral regrowth for QPSK
  • QFN package simplifies integration into ground terminals and links
  • Three independent stages enable customizable performance for varied modulations

Pulse Analysis

GaN technology has become the cornerstone of high‑frequency power amplification, especially as satellite broadband and 5G backhaul push deeper into the Ka‑band spectrum. Compared with traditional silicon or GaAs devices, GaN delivers higher breakdown voltage, superior thermal conductivity and faster switching, translating into greater output power and efficiency at millimetre‑wave frequencies. Nxbeam, building on its 2018‑onward focus on GaN MMICs, leverages these material advantages to address the growing demand for compact, high‑performance amplifiers that can be deployed in dense ground‑station arrays and point‑to‑point microwave links.

The NPQ2107‑SM distinguishes itself with a 17 W saturated output across the 27.5‑31 GHz band, a respectable 29% power‑added efficiency and a 22 dB linear gain. Its linear performance—exceeding 9 W output while maintaining –30 dBc spectral regrowth for a 10 MSPS QPSK signal—meets the stringent spectral mask requirements of modern satellite modulations such as DVB‑S2X and high‑order QAM. The QFN package reduces board‑level parasitics and eases thermal management, while the three independently biased stages let system engineers fine‑tune gain, compression and linearity for diverse use cases, from driver stages to power‑combined arrays.

For the communications industry, the NPQ2107‑SM could accelerate the rollout of high‑throughput satellite services and enable more flexible terrestrial microwave networks. Its ability to be power‑combined without sacrificing return loss simplifies the creation of multi‑kilowatt transmitter modules, a key factor for cost‑effective capacity expansion. As competitors race to offer comparable Ka‑band solutions, Nxbeam’s emphasis on integration ease and performance flexibility positions it to capture a significant share of the emerging market for next‑generation wireless infrastructure. Continued innovation in GaN MMICs will likely drive further reductions in system cost and power consumption, reinforcing the strategic importance of devices like the NPQ2107‑SM.

GaN Ka-Band QFN Packaged Power Amplifier: NPQ2107-SM

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