Onsemi Introduces GaNEXUS GaN Portfolio

Why It Matters

Higher efficiency and power density shrink module size and cooling needs, cutting capital and operating expenses for AI data‑centres and industrial systems. This positions Onsemi to capture a larger share of the fast‑growing GaN market.

Key Takeaways

• GaNEXUS offers 40‑650 V GaN FETs with integrated protection
• Enables 30‑60% smaller magnetics in low‑voltage AI server converters
• Delivers 1.5‑2× higher power density across AI and industrial applications
• Improves efficiency by up to 2% in high‑frequency power stages
• Thermally enhanced packages keep standard footprints for dual sourcing

Pulse Analysis

Gallium nitride (GaN) has become the material of choice for next‑generation power conversion, offering switching speeds and thermal characteristics that silicon cannot match. Onsemi’s recent launch of the GaNEXUS portfolio positions the company squarely in the fast‑growing segment that serves AI‑driven data centres, high‑precision robotics, and modern energy infrastructure. By covering a voltage span from 40 V to 650 V, the new family addresses both low‑voltage bus converters and high‑voltage DC‑DC stages, giving system architects a single source for diverse power topologies. The timing aligns with a surge in demand for compact, high‑efficiency power modules as hyperscale operators expand compute capacity while tightening energy budgets.

GaNEXUS devices combine thermally enhanced packaging with industry‑standard footprints, allowing designers to retain existing PCB layouts while reaping the benefits of GaN. Reported gains include 30‑60 % reductions in magnetic size for 48 V intermediate‑bus converters, and up to a 60 % shrinkage in high‑frequency AC‑DC stages, translating into 1.5‑2× higher power density. Efficiency improvements of 0.5‑2 % may appear modest, but at the scale of data‑centre power supplies they can shave megawatts of waste heat and lower cooling costs. Integrated protection features further simplify system integration, reducing component count and improving overall reliability.

The introduction of GaNEXUS strengthens Onsemi’s competitive stance against rivals such as Infineon, Texas Instruments and Efficient Power, all of which are expanding their GaN line‑ups. Dual‑sourcing options like TOLL Bottom Cooling and TOLT Top Cooling mitigate supply‑chain risk, a critical factor for US‑based manufacturers seeking domestic alternatives to Asian‑origin components. As AI workloads continue to push power envelopes, the ability to deliver higher density at lower thermal budgets could accelerate adoption of GaN in next‑generation server architectures. Analysts expect the GaN market to exceed $10 billion by 2030, and Onsemi’s broad voltage coverage positions it to capture a meaningful share of that growth.