Nitride Global, USLLC and Axiom Space Awarded NASA SBIR Grant

Why It Matters

Micro‑gravity crystal growth could unlock defect‑free AlN substrates, accelerating high‑performance power electronics for both space and Earth markets. The grant positions the U.S. as a pioneer in on‑orbit semiconductor production, a strategic advantage for defense and clean‑energy technologies.

Key Takeaways

• NASA SBIR funds AlN crystal PVD reactor for ISS
• Micro‑gravity reduces defects, enabling ultra‑pure AlN substrates
• Phase‑I prototype achieved 2800‑3200 °C at <400 W
• Phase‑II aims for flight‑ready, ISS‑compatible reactor
• AlN’s properties surpass SiC and GaN for power electronics

Pulse Analysis

Aluminum nitride (AlN) is emerging as a next‑generation ultra‑wide‑bandgap semiconductor, offering thermal conductivity, radiation hardness, and breakdown strength that outstrip silicon carbide and gallium nitride. On Earth, AlN crystal growth is hampered by thermal convection, high dislocation densities, and size constraints, limiting its adoption in high‑power and optoelectronic devices. Researchers have long recognized that the micro‑gravity environment of low‑Earth‑orbit can suppress convection, flatten thermal gradients, and accelerate seed formation, potentially delivering defect‑free, large‑area substrates in months rather than decades.

To capitalize on that promise, Nitride Global, United Semiconductors LLC, and Axiom Space secured a NASA Small Business Innovation Research grant to design a physical vapor deposition (PVD) reactor for in‑space AlN crystal production. In Phase I the team built a proof‑of‑concept unit that reached 2,800‑3,200 °C while consuming only 250‑400 W and weighing under 700 g—parameters compatible with the International Space Station’s power and mass limits. Phase II will refine the design for ISS mid‑deck locker integration, optimize growth models, and complete NASA safety reviews, paving the way for a flight‑ready experiment.

Successful deployment would create a versatile high‑temperature materials platform, enabling not only AlN but also silicon carbide, oxide crystals, and other advanced compounds to be grown in orbit. That capability aligns with NASA’s push toward sustainable commercial manufacturing in space and could accelerate the technology readiness of ultra‑high‑performance semiconductors for terrestrial power grids, electric vehicles, and defense systems. By establishing an on‑orbit crystal growth line, the United States positions itself at the forefront of a new industrial frontier where space‑derived materials feed both orbital and Earth‑based markets.