Mitsubishi Electric Samples Fifth-Gen SiC-MOSFET for xEVs

Why It Matters

By cutting inverter losses, the 5th‑gen SiC‑MOSFET can extend vehicle range and shrink power‑module size, a critical advantage as automakers chase efficiency gains. The technology positions Mitsubishi as a key supplier in the rapidly growing xEV power‑electronics market.

Key Takeaways

• Mitsubishi's 5th-gen SiC-MOSFET reduces on-resistance 25% vs 4th-gen.
• Lower on-resistance cuts inverter losses, enabling smaller, more efficient xEV powertrains.
• Trench structure improves durability, limiting long-term resistance drift.
• Samples ship late June 2026; bare-die form for OEM integration.
• Mitsubishi will showcase devices at PCIM Expo Nuremberg, June 9‑11.

Pulse Analysis

Silicon‑carbide (SiC) power devices have become the cornerstone of next‑generation electric‑vehicle (EV) powertrains, offering higher switching frequencies and lower conduction losses than traditional silicon. Over the past few years, automakers and inverter manufacturers have accelerated SiC adoption to meet stricter efficiency targets and to squeeze more range out of a fixed battery pack. Industry analysts estimate that SiC‑based inverters will account for more than half of new EVs by 2030, driven by regulatory pressure and consumer demand for longer driving distances.

Mitsubishi Electric’s fifth‑generation SiC‑MOSFET pushes the performance envelope by delivering roughly a 25 % reduction in on‑resistance compared with its fourth‑generation trench device. The lower resistance directly translates into smaller switching losses, enabling inverter modules that are both more compact and cooler‑running—key factors for integrating power electronics into tight e‑axle packages. Mitsubishi’s proprietary trench architecture also stabilizes the device’s electrical characteristics over time, mitigating the drift that can erode efficiency in high‑stress automotive environments. These gains give OEMs a tangible pathway to improve vehicle range without enlarging battery capacity.

The timing of the sample release aligns with a surge of EV launches slated for 2026‑2027, giving automakers a fresh silicon‑carbide option just as they finalize inverter designs. Competitors such as Infineon, ON Semiconductor and STMicroelectronics are also racing to shrink on‑resistance, but Mitsubishi’s claim of the lowest‑available figure could translate into a pricing premium for high‑volume customers. By showcasing the devices at the PCIM Expo in Nuremberg, the company signals confidence in rapid market adoption and positions itself as a strategic supplier in the evolving xEV power‑electronics ecosystem.