Ion Migration Control in Lead‐Free Halide Perovskite Transistors for Logic and Neuromorphic Circuits

Why It Matters

Controlling ion migration unlocks dual‑function logic and brain‑inspired computing on a single, environmentally friendly material, accelerating the rollout of low‑power wearable electronics.

Key Takeaways

• Sn perovskites lower ion migration than lead variants.
• Controlled vacancies enable stable logic switching.
• Residual ion drift fuels neuromorphic functionality.
• Electric, thermal, and optical fields tune ion transport.
• Wafer-scale arrays bring wearable perovskite circuits closer.

Pulse Analysis

Perovskite transistors have attracted attention for flexible electronics because they combine high carrier mobility with solution‑processable, low‑temperature fabrication. Lead‑based halide perovskites, while performant, raise environmental and health concerns that limit large‑scale adoption. Tin‑based, lead‑free perovskites address these issues by offering comparable charge transport while inherently presenting higher vacancy migration barriers, which suppress the ion‑induced instability that typically plagues logic devices. This material advantage positions Sn‑PeFETs as a compelling alternative for next‑generation CMOS‑compatible circuits.

Ion migration in perovskites is a double‑edged sword: excessive drift degrades transistor performance, yet a controlled degree of movement can emulate synaptic plasticity essential for neuromorphic computing. The review outlines a triad of mitigation strategies—oxidation control, interfacial engineering, and external stimulus modulation—to fine‑tune ionic pathways. By applying electric fields, temperature gradients, or light, designers can dynamically adjust conductance states, enabling reconfigurable, low‑power operation that bridges conventional Boolean logic with brain‑inspired processing on the same chip.

Scalability remains the final hurdle. Recent progress in wafer‑scale PeFET arrays demonstrates uniform performance across large areas, paving the way for roll‑to‑roll manufacturing of wearable and large‑area electronics. Integration with existing CMOS infrastructure ensures that these lead‑free devices can be adopted without overhauling current supply chains. The convergence of sustainability, flexible form factors, and multifunctional computing promises to reshape the intelligent‑electronics market, offering manufacturers a path to greener, more adaptable products.