Tuning Spin Valley Coupling via Strain‐Amplified Magnetic Proximity in Fe3GaTe2/WS2 Heterostructures

Why It Matters

Strain‑tuned magnetic proximity unlocks stronger valley control, accelerating the development of high‑performance spin‑valleytronic and quantum devices.

Key Takeaways

• Strain amplifies interlayer coupling in Fe3GaTe2/WS2 heterostructure
• Magnetic proximity effect yields expanded valley polarization hysteresis
• Excitonic Landé g‑factor reaches –30 under strain
• First‑principles link band‑structure reconfiguration to charge transfer
• Strain engineering opens path for advanced spin‑valleytronic devices

Pulse Analysis

The magnetic proximity effect (MPE) has emerged as a cornerstone for imparting magnetic characteristics to otherwise non‑magnetic two‑dimensional layers, enabling control over spin and valley degrees of freedom. Yet, conventional MPE suffers from weak interfacial exchange, limiting its utility in valleytronic applications that demand robust exciton manipulation. By integrating a ferromagnetic Fe3GaTe2 layer with a semiconducting WS2 monolayer, researchers created a platform where strain can be precisely introduced through a patterned gold grating, setting the stage for amplified interlayer interactions.

Under tensile strain, the heterostructure exhibits a pronounced expansion of the WS2 exciton valley‑polarization hysteresis, allowing clear modulation within a modest ±1 T magnetic field. Simultaneously, the Zeeman splitting of excitonic states intensifies, yielding a giant Landé g‑factor of –30—far exceeding values reported for unstrained systems. First‑principles simulations reveal that strain reshapes the band alignment, fostering spin‑dependent charge transfer across the interface and thereby strengthening the MPE. This mechanistic insight underscores strain as a versatile knob for tailoring quantum properties in van der Waals stacks.

The implications extend beyond academic curiosity. Enhanced valley polarization and giant g‑factors translate directly into higher‑fidelity spin‑valley qubits, low‑power non‑volatile memory, and ultra‑fast optoelectronic modulators. As the semiconductor industry pivots toward atomically thin platforms, strain engineering offers a scalable, CMOS‑compatible route to embed magnetic functionality without sacrificing device density. Future research will likely explore combinatorial strain patterns, heterostructure diversity, and integration with photonic circuits, cementing strain‑amplified MPE as a linchpin for next‑generation quantum and valleytronic technologies.