Semiconductor Engineering

Semiconductor Engineering

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Semi/hardware industry coverage incl. results impacts

HBM4E Raises The Bar For AI Memory Bandwidth
NewsMar 12, 2026

HBM4E Raises The Bar For AI Memory Bandwidth

Rambus unveiled HBM4E, the latest high‑bandwidth memory that doubles HBM4’s data rate to 16 Gbps per pin, delivering up to 24.6 TB/s aggregate bandwidth across a six‑device stack. The new standard retains HBM’s low‑power, low‑latency characteristics while expanding channel count to 32...

By Semiconductor Engineering
Rethinking Voice AI At The Edge: A Practical Offline Pipeline
NewsMar 12, 2026

Rethinking Voice AI At The Edge: A Practical Offline Pipeline

Arm and NVIDIA unveiled an offline, real‑time voice AI pipeline on the DGX Spark platform, combining the faster‑whisper speech‑to‑text engine with the vLLM large‑language‑model server. The heterogeneous design assigns latency‑critical transcription to Arm Cortex‑X/A CPU cores while the GPU handles...

By Semiconductor Engineering
Serial Wire Debug (SWD) Protocol: Efficient Debug Interface For Arm-Based Systems
NewsMar 12, 2026

Serial Wire Debug (SWD) Protocol: Efficient Debug Interface For Arm-Based Systems

The Serial Wire Debug (SWD) protocol offers a two‑pin alternative to traditional JTAG, delivering high‑speed debug access for Arm Cortex‑M based SoCs. By using a single clock (SWCLK) and a bidirectional data line (SWDIO), SWD halves the pin count while...

By Semiconductor Engineering
AI Power on the Edge
NewsMar 12, 2026

AI Power on the Edge

Edge AI is reshaping device design by making power and thermal constraints primary, not optional, considerations. Engineers must build hardware architectures from the ground up and adopt a hardware‑software‑model co‑design approach to meet milliwatt budgets and fanless thermal envelopes. Memory...

By Semiconductor Engineering
Scale-Up, Scale-Out Get a New Partner
NewsMar 12, 2026

Scale-Up, Scale-Out Get a New Partner

The article outlines three AI‑focused data‑center scaling models—scale‑up (in‑rack, latency‑centric, copper‑based), scale‑out (inter‑rack, jitter‑centric, RDMA and optical), and the newer scale‑across (cross‑data‑center, long‑distance congestion management). It details how each approach uses distinct interconnect strategies and resource allocation methods, and cites...

By Semiconductor Engineering
Customizing Foundation IP For Ultra-Low-Voltage Designs
NewsMar 12, 2026

Customizing Foundation IP For Ultra-Low-Voltage Designs

Synopsys customized its Foundation IP to enable an ultra‑low‑voltage (0.4 V) optical networking chip designed for edge AI workloads. The team created a new memory compiler, added dual‑rail voltage support, and applied power‑gating and low‑leakage cells to meet aggressive power‑performance‑area (PPA)...

By Semiconductor Engineering
Neuromorphic Computing Platform In Perovskite Nickelates (UCSD, Rutgers)
NewsMar 11, 2026

Neuromorphic Computing Platform In Perovskite Nickelates (UCSD, Rutgers)

Researchers at UCSD and Rutgers have demonstrated a neuromorphic computing platform built from proton‑doped perovskite nickelate (NdNiO3) devices. By integrating symmetric and asymmetric junctions on a single wafer, the system combines ultrafast proton‑mediated dynamics with multilevel resistance memory, achieving nanosecond...

By Semiconductor Engineering
Accelerating 4D Imaging Radar with Vision 4DR
NewsMar 11, 2026

Accelerating 4D Imaging Radar with Vision 4DR

Cadence introduced a 4D imaging radar solution that couples its Vision 341 DSP with the Vision 4DR accelerator to handle the heavy FFT workload inherent in high‑resolution MIMO radars. Adding elevation to range, velocity and azimuth creates a massive data...

By Semiconductor Engineering
The Specialty Device Surge Part 1: Wafer Size Transitions Are Powering The Future Of Specialty Devices And Bringing New Challenges
NewsMar 10, 2026

The Specialty Device Surge Part 1: Wafer Size Transitions Are Powering The Future Of Specialty Devices And Bringing New Challenges

Specialty devices—including SiC and GaN power transistors, MEMS, photonics, and CIS—are shifting from traditional 150mm and 200mm wafers to larger 200mm and 300mm formats. GaN power is moving to 300mm, while SiC power advances to 200mm, and photonics, MEMS, and...

By Semiconductor Engineering
Enabling Seamless Monitoring, Test, And Repair In Multi-Die Designs
NewsMar 10, 2026

Enabling Seamless Monitoring, Test, And Repair In Multi-Die Designs

The semiconductor industry is turning to 2.5D/3D multi‑die designs to meet AI‑driven performance and efficiency goals. However, testing, monitoring, and repairing hidden chiplets remain a major hurdle. Synopsys and TSMC showcased a demo vehicle built on TSMC’s N3P process that...

By Semiconductor Engineering
The Petabyte Problem: How AI Is Finally Making Semiconductor Manufacturing Data Actionable
NewsMar 10, 2026

The Petabyte Problem: How AI Is Finally Making Semiconductor Manufacturing Data Actionable

Semiconductor manufacturers are grappling with petabyte‑scale data from probe, assembly and test operations, yet less than 5% is currently used for analytics. PDF Solutions introduced its Exensio platform, combining a parallel data architecture, semantic integration, and agentic LLM capabilities to...

By Semiconductor Engineering
Ensuring AI Reliability: Mitigating OCP’s Silent Data Corruption Risks
NewsMar 10, 2026

Ensuring AI Reliability: Mitigating OCP’s Silent Data Corruption Risks

An Open Compute Project whitepaper, co‑authored by NVIDIA, Google, Meta and Microsoft, warns that silent data corruption (SDC) is escalating in AI data centers as process geometries shrink and workloads intensify. SDC originates from timing violations, voltage‑frequency scaling, and wear‑out,...

By Semiconductor Engineering
Detecting Chemical Variability At Advanced Nodes
NewsMar 10, 2026

Detecting Chemical Variability At Advanced Nodes

Advanced‑node semiconductor yield is increasingly eroded by subtle chemical variability in thin films, interfaces, and residues rather than obvious particle defects. This molecular variability manifests as parametric drift and margin erosion that only appear under workload or thermal stress, making...

By Semiconductor Engineering
Research Bits: Mar. 9
NewsMar 9, 2026

Research Bits: Mar. 9

Researchers at UNIST unveiled a 28 nm injection‑locked clock multiplier that delivers 2.1 GHz signals with a record‑low -81.36 dBc reference spur and 280.9 fs jitter while consuming just 12.28 mW. A multinational team demonstrated a 2D‑material thermal sensor that reads temperature in 100 ns, is...

By Semiconductor Engineering
The Future of Semiconductors: Engineering in the Convergence Era
NewsMar 9, 2026

The Future of Semiconductors: Engineering in the Convergence Era

The semiconductor sector is moving into a convergence era where silicon, software, physics, packaging, security, AI and power constraints intersect. While transistor scaling remains relevant, architecture, integration, verification and automation now drive growth. System‑level engineering, digital twins and software‑defined chips...

By Semiconductor Engineering