Atomera and Synopsys Expand Collaboration to Accelerate GaN Modeling in RF, Power Devices

Why It Matters

Enhanced GaN TCAD modeling shortens design cycles for high‑performance RF and power chips, giving customers faster access to efficient semiconductor technologies.

Key Takeaways

• Atomera adds GaN calibration to Synopsys Sentaurus TCAD
• MSTcad integration enables material‑aware GaN device simulations
• Collaboration targets faster market entry for RF and power chips
• Joint effort produces marketing decks and calibrated simulation libraries
• Feedback loop improves Synopsys tools for advanced material use

Pulse Analysis

Gallium nitride has emerged as a cornerstone material for next‑generation radio‑frequency (RF) amplifiers and high‑voltage power converters, offering higher electron mobility and breakdown strength than silicon. However, designing GaN devices demands precise predictive models that capture both material physics and process variations. Traditional TCAD platforms often lack calibrated data for emerging compound semiconductors, leading to longer iteration cycles and higher development costs. As the market for 5G infrastructure, electric‑vehicle powertrains, and data‑center converters expands, engineers are seeking robust simulation environments that can de‑risk GaN projects early in the design flow.

Against this backdrop, Atomera and Synopsys have deepened their long‑standing partnership by coupling Atomera’s MSTcad—an add‑on that models the company’s proprietary Mears Silicon Technology—with Synopsys’ Sentaurus TCAD suite. The joint effort will produce a calibrated GaN workflow, complete with reference decks and marketing collateral, allowing users to evaluate how MST‑enhanced materials influence device performance. By feeding real‑world feedback into Sentaurus, Atomera helps refine the physics models, while Synopsys provides the simulation backbone that scales across complex RF and power layouts. The result is a turnkey solution that shortens the time‑to‑silicon for GaN products.

The collaboration’s ripple effects extend beyond the two companies. Semiconductor foundries and design houses can now access a validated GaN modeling stack, reducing reliance on costly prototype runs and accelerating product differentiation. For investors, the partnership signals confidence that GaN will capture a larger share of the RF and power markets, potentially driving revenue growth for firms that adopt the technology early. Looking ahead, the combined MSTcad‑Sentaurus platform could serve as a template for integrating other advanced materials—such as silicon‑carbide or emerging 2‑D semiconductors—into mainstream TCAD workflows.