Infineon Expands CoolGaN BDS Portfolio with Compact 40 V Bidirectional GaN Switches

Why It Matters

By dramatically reducing size and losses, these GaN switches enable slimmer, more efficient power architectures in smartphones, notebooks and wearables, accelerating the shift from silicon MOSFETs to GaN in consumer electronics.

Key Takeaways

• New 40 V GaN switches cut PCB area up to 82%
• Integrated bidirectional design halves component count versus silicon MOSFETs
• Gate charge reduced 40%, boosting fast‑charging efficiency
• RDD(on) as low as 4.2 mΩ improves power loss performance
• Over 40 GaN products launched; 300 mm wafer scaling underway

Pulse Analysis

Gallium‑nitride (GaN) is reshaping power‑management markets as manufacturers chase higher efficiency and smaller form factors. Infineon’s CoolGaN portfolio, now exceeding 40 products, reflects a strategic pivot from traditional silicon MOSFETs toward wide‑bandgap solutions that operate at higher frequencies with lower losses. The company’s investment in 300 mm GaN wafer production signals confidence that economies of scale will soon bring GaN’s cost advantage to mainstream consumer devices, a trend echoed by rivals such as Texas Instruments and NXP.

The newly announced IGK048B041S and IGK120B041S stand out for their ultra‑compact WLCSP footprints—2.1 × 2.1 mm² and 1.7 × 1.2 mm² respectively—enabling designers to reclaim board real estate in space‑constrained gadgets. By consolidating the function of two back‑to‑back silicon MOSFETs into a single bidirectional GaN switch, the parts cut component count by roughly 50% and lower gate charge by up to 40%, which translates into faster switching and up to 85% reduced leakage current. These electrical gains directly improve fast‑charging performance and thermal management, critical factors for high‑end smartphones and thin‑profile notebooks.

For the broader industry, Infineon’s expansion of its 40 V BDS family underscores the growing demand for true bidirectional protection in USB‑PD, load‑switching, and power‑multiplexing applications. The combination of reduced RDS(on) values—4.2 mΩ for the larger device and 9 mΩ for the smaller—offers a compelling efficiency edge that can extend battery life and lower system cost. As more OEMs adopt GaN‑based power blocks, the competitive landscape will tighten, prompting faster innovation cycles and potentially accelerating the transition to 300 mm GaN fabs, which promise higher throughput and lower per‑watt pricing.