EPC Space Adds EPC7C010 and EPC7C011 Half-Bridge Buck Platforms for High-Rel and Rad-Hard Applications

Why It Matters

These high‑frequency, high‑efficiency GaN modules enable aerospace designers to increase power density while reducing weight and thermal load, a critical advantage for radiation‑hard missions.

Key Takeaways

• 100 V/20 A board achieves 94.7% peak efficiency.
• 200 V/10 A board reaches 96.6% peak efficiency.
• Both support 50 kHz‑1.5 MHz switching range.
• Galvanic isolation ensures balanced gate driver delays.
• Designed for radiation‑hard aerospace and high‑reliability markets.

Pulse Analysis

The aerospace sector has long wrestled with the trade‑off between power performance and the stringent reliability requirements of spaceflight. Gallium‑nitride (GaN) technology, especially in enhancement‑mode (eGaN) form, offers a compelling solution by delivering higher switching speeds and lower conduction losses than traditional silicon devices. When combined with radiation‑hard processes, GaN transistors become viable for missions where exposure to cosmic rays and extreme temperature cycles can degrade conventional components. This shift is driving a broader move toward compact, high‑efficiency power converters for satellites, deep‑space probes, and defense platforms.

EPC Space’s EPC7C010 and EPC7C011 boards translate these material advantages into ready‑to‑evaluate platforms. The 100 V/20 A EPC7C010 targets lower‑voltage point‑of‑load converters, achieving 94.7% efficiency at under 50 V input, while the 200 V/10 A EPC7C011 pushes efficiency to 96.6% for higher‑voltage domains. Both boards operate natively at 350 kHz, yet designers can retune the switching frequency across a 50 kHz‑1.5 MHz window by swapping filter components, providing flexibility for single‑phase, multi‑phase motor drives, or Class‑D audio amplifiers. Integrated dead‑time control and galvanic isolation between gate drivers further simplify layout and improve reliability in harsh environments.

The introduction of these evaluation kits signals a maturation of the radiation‑hard GaN market. By lowering the barrier to entry—through comprehensive documentation, BOM transparency, and plug‑and‑play PWM interfaces—EPC Space positions itself as a key enabler for next‑generation space power systems. As satellite constellations expand and defense electronics demand higher power density, designers are likely to adopt such high‑frequency GaN solutions to shrink mass, cut cooling requirements, and extend mission lifespans, accelerating the overall transition away from legacy silicon power architectures.