SemiQ Launches QSiC Dual3 Family of 1200V Half-Bridge MOSFET Modules

SemiQ Launches QSiC Dual3 Family of 1200V Half-Bridge MOSFET Modules

Semiconductor Today
Semiconductor TodayMar 23, 2026

Why It Matters

The Dual3 modules deliver higher efficiency and power density, reducing size, weight, and cooling costs for high‑power data‑center and energy‑storage applications, accelerating the shift from silicon IGBTs to silicon‑carbide solutions.

Key Takeaways

  • 1200 V SiC half‑bridge modules target data‑center cooling
  • RDS(on) as low as 1 mΩ, 240 W/in³ density
  • Optional parallel Schottky diode cuts switching losses
  • Designed to replace IGBT modules with minimal redesign
  • Supports 250 kW liquid chiller, lighter heat‑sink

Pulse Analysis

Data centers are confronting unprecedented power and thermal loads as AI workloads surge, prompting a scramble for more efficient power conversion technologies. Silicon‑carbide (SiC) devices have emerged as a compelling alternative to traditional silicon IGBTs, offering lower conduction losses and superior thermal performance. Within this landscape, SemiQ’s QSiC Dual3 series addresses a critical gap by delivering 1200 V half‑bridge modules that combine industry‑leading efficiency with compact form factors, making them ideal for high‑density cooling systems and grid‑level converters.

The Dual3 family distinguishes itself with an RDS(on) of just 1 mΩ and a power density of 240 W/in³, metrics that translate into smaller heat‑sink requirements and lighter overall system weight. An optional parallel Schottky barrier diode further trims switching losses, especially in high‑temperature environments common to liquid‑chiller applications. Each MOSFET die undergoes rigorous wafer‑level gate‑oxide burn‑in testing exceeding 1450 V, ensuring reliability that meets or surpasses IGBT standards while simplifying redesign efforts for OEMs seeking to transition to SiC.

Market implications are significant: the ability to replace IGBT modules with minimal redesign lowers entry barriers for manufacturers across data‑center, renewable‑energy, and industrial sectors. By supporting up to 250 kW liquid‑chiller loads, the Dual3 modules promise cost savings through reduced cooling infrastructure and enhanced system efficiency. As the industry pushes toward greener, higher‑performance power electronics, SemiQ’s offering positions it as a strong contender in the rapidly expanding SiC market, potentially reshaping supply chains and design paradigms for next‑generation power converters.

SemiQ launches QSiC Dual3 family of 1200V half-bridge MOSFET modules

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