EPC Space Adds Half-Bridge Buck Platforms

Why It Matters

The boards show how high‑frequency GaN stages can raise efficiency and power density, enabling lighter, more reliable converters for demanding aerospace and high‑reliability systems.

Key Takeaways

• EPC7C010 supports 100 V, 20 A half‑bridge buck
• EPC7C011 supports 200 V, 10 A half‑bridge buck
• Peak efficiencies reach 94.7% and 96.6% respectively
• Operates 350 kHz, tunable 50 kHz‑1.5 MHz
• Includes adjustable dead‑time and isolated gate drivers

Pulse Analysis

Gallium‑nitride (GaN) technology continues to reshape power‑electronics design, offering switching speeds an order of magnitude higher than silicon while delivering superior efficiency and thermal performance. In aerospace and high‑reliability industrial markets, where weight, volume, and power density are critical, eGaN devices enable designers to shrink converters and reduce cooling requirements, accelerating the shift toward next‑generation power architectures.

EPC Space’s latest demonstration boards, the EPC7C010 and EPC7C011, translate those advantages into ready‑to‑test platforms. The EPC7C010, built around the EPC7004B HEMT, handles 100 V and 20 A with a measured 94.7% peak efficiency, whereas the EPC7C011 leverages the EPC7007B HEMT for 200 V, 10 A operation and reaches 96.6% efficiency. Both boards are optimized for 350 kHz switching but can be retuned from 50 kHz to 1.5 MHz, thanks to adjustable dead‑time and interchangeable output filter components, giving engineers flexibility to meet diverse load profiles.

The practical impact is significant: designers can now prototype high‑frequency, high‑density converters for point‑of‑load, motor‑drive, and Class‑D audio applications with minimal redesign effort. Galvanic isolation between gate drivers ensures balanced propagation delays, enhancing reliability in harsh environments. As aerospace programs demand ever‑lighter power modules and industrial equipment seeks higher efficiency to meet sustainability goals, these EPC evaluation boards provide a fast‑track path from concept to production, reinforcing GaN’s role as a cornerstone of future power‑electronics ecosystems.