A New Approach for 10 kV GaN
Researchers at Ariona State University have introduced a plasma‑based edge‑termination technique that removes etching and passivation steps for 10 kV GaN power devices. The method creates resistive regions in the top p‑GaN layer using hydrogen plasma, yielding a more uniform electric field and boosting breakdown voltage to 9.5 kV—about 3 kV higher than untreated devices. The fabricated diodes demonstrate a 1.1 V turn‑on voltage, 10¹⁰ on/off ratio, and on‑resistance scaling linearly with anode‑to‑cathode length. Benchmarking shows a Baliga’s figure of merit comparable to state‑of‑the‑art GaN and Ga₂O₃ Schottky diodes.
Unifying III-Vs and Silicon with an RF Interposer
imec unveiled a second‑generation 300 mm RF silicon interposer that bridges silicon logic with III‑V power devices such as InP and GaN. The platform uses DuPont’s low‑loss XP80 polymer and three copper redistribution layers to deliver record‑low insertion loss—0.30 dB/mm at 140 GHz...
Diode Improvements Drive Fibre Laser Growth
Advances in GaAs diode technology have slashed the $/Watt cost of industrial fibre lasers, fueling a market that now exceeds $23 billion annually. The superior efficiency and reliability of fibre lasers have displaced CO₂ and Nd:YAG systems across metal marking, cutting...
Accelerating GaN-on-Silicon RF Power Amplification
Researchers at Nanyang Technological University and A*STAR have demonstrated a GaN‑on‑silicon HEMT that delivers 0.67 W mm⁻¹ output at 123 GHz using a 10 V drain bias, marking the first power‑amplification result beyond 100 GHz for this platform. The device employs a 5 nm AlN barrier,...
Asymmetry Spawns Superior SiC Superjunctions
Researchers at Rohm have unveiled a unified analytical framework for silicon‑carbide (SiC) superjunction devices that incorporates crystal‑axis impact‑ionisation anisotropy and arbitrary geometric asymmetry. By tuning the width and doping of n‑ and p‑type pillars, the asymmetric semi‑superjunction design reduces specific...
Stress-Tested, Future-Ready GaN
Infineon is scaling lateral GaN HEMTs that combine ultra‑low on‑state resistance with high breakdown voltage, leveraging GaN’s 3.44 eV bandgap and high electron mobility. The company’s reliability program adds accelerated lifetime tests, wafer‑level DHTOL screening and extensive statistical analysis to exceed...
Dylan James Scientific Signed as K-Space European Representative
k‑Space has appointed Dylan James Scientific as its new European sales and service representative for thin‑film semiconductor metrology tools. The partnership follows the retirement of long‑time distributor RTA and includes on‑site technical training for DJS engineers. k‑Space’s tools are deployed...
Scientists Develop Three-in-One Diode
Researchers at the University of Science and Technology of China have unveiled a GaN‑based PN junction photodiode that simultaneously handles photosensing, memory storage, and processing. By inserting an n‑AlGaN charge‑storage layer, the device can switch among three functional modes using...
Marktech Launches High Power 280nm UVC LEDs
Marktech Optoelectronics has introduced a family of high‑power 280 nm UVC LEDs available in single‑, two‑ and four‑chip formats. The devices deliver wall‑plug efficiencies up to 7% and are rated for more than 15,000 hours at the L70 degradation point. By...
Riber Delivers Strong Earnings Growth in 2025
Riber posted 2025 full‑year results showing a modest 2% dip in revenue to €40.3 million (about $44 million) but a 27% jump in net income to €5.2 million ($5.7 million). The company’s operating margin improved to 13% of sales, aided by a favorable product...
Japanese Team Achieves 2 Μm-Band PCSEL Laser Oscillation
Asahi Kasei Microdevices (AKM) and Kyoto University have demonstrated laser oscillation in a 2 μm-band photonic crystal surface‑emitting laser (PCSEL). The breakthrough showcases PCSEL’s ability to deliver high directionality and ultra‑narrow linewidth in a compact infrared source. By operating at 2 μm,...
QuinAs Links Memory Device Physics to AI Performance
QuInAs Technology has published research linking its ULTRARAM compound‑semiconductor memory device directly to AI system performance. The paper introduces a physics‑based compact modelling framework that captures resonant tunnelling and floating‑gate dynamics, enabling hardware‑aware benchmarking of ULTRARAM as a synaptic element...
Wolfspeed: The 10 kV SiC MOSFET
Wolfspeed has launched the world’s first commercial 10 kV SiC MOSFET, delivered as a bare die. The device targets high‑voltage motor drives, electrical infrastructure, and niche markets such as mining and nuclear‑fusion plasma generation. Compared with the incumbent 6.5 kV silicon IGBT,...
Researchers Demonstrate Megawatt-Class Ga₂0₃ Module
A research team led by the University of Hong Kong has built a megawatt‑class gallium oxide (Ga₂O₃) power module that can pulse‑switch continuously at 1,000 V and 1,000 A. The device uses a novel junction‑side cooling architecture with a high‑permittivity interface, cutting...
Light Bends Perovskite Crystal Lattice
Researchers at UC Davis have demonstrated that halide perovskite crystals undergo rapid, reversible lattice distortions when illuminated, a phenomenon termed photostriction. Using laser excitation and X‑ray probing, the team showed the effect is tunable by composition, light wavelength, and intensity,...