Sivers Awarded $6.6m EW-STAR Extension
Sivers Semiconductors has secured a second‑year extension of its Electronic Warfare (EW STAR) project, receiving a $6.6 million award from the Northeast Microelectronics Coalition (NEMC) Hub under the U.S. Microelectronics Commons program. The Year 2 funding recognizes the company’s technical progress and milestone execution in modernizing defense infrastructure. EW STAR focuses on wideband antenna array technology that enables simultaneous transmit‑and‑receive capabilities for electronic warfare, communications, and radar. The program involves collaborations with BAE Systems, MIT Lincoln Laboratory, and Columbia University.
Fraunhofer IPMS Develops Wafer-Level Chiplet Systems
Researchers at Germany’s Fraunhofer Institute for Photonic Microsystems (IPMS) have unveiled a wafer‑level quasi‑monolithic integration (QMI) technique that embeds chiplets into structured silicon pockets and levels them for back‑end‑of‑line wiring. The method bridges the gap between traditional chip packaging and...
Infineon 40V CoolGaN BDS Family Shrinks Portable Power Designs
Infineon has added two GaN bidirectional switches, the IGK048B041S and IGK120B041S, to its 40 V CoolGaN BDS family. The devices shrink PCB footprints by up to 82 percent and halve the component count by merging two MOSFETs into a single package. Both...
Singapore Team Makes Ultrathin Perovskite Solar Cells
Scientists at Singapore’s Nanyang Technological University have demonstrated perovskite solar cells that are roughly 50 times thinner than conventional versions. Using a vacuum‑based thermal evaporation process, they produced opaque cells with up to 12% efficiency and a semi‑transparent variant that...
Printed Oxygen 'Highways' Shatter 2D Transistor Speed Limit
Researchers in China have developed a room‑temperature printed gallium oxide (GaOx) tunneling contact that bridges metal electrodes to WS₂ 2D transistors. The 3.6 nm‑thin GaOx layer, rich in oxygen vacancies, delivers a record electron mobility of 296 cm²·V⁻¹·s⁻¹ and a contact resistance...
Another Surge for SiC
At CS International, onsemi’s senior director Mrinal Das highlighted silicon‑carbide (SiC) as the key enabler for megawatt‑scale power electronics in electric‑vehicle (EV) fast charging and AI data‑center servers. He noted that 1 MW charging is already available and that SiC’s modest...
Samsung Reveals Next-Gen Stretchable Display
Samsung Display unveiled a stretchable microLED instrument cluster at SID Display Week 2026, delivering a world‑leading 200 PPI resolution—about 67 percent higher than its 120 PPI predecessor. The panel uses a novel bridge structure that doubles pixel density while preserving electrical performance during...
India Approves Compound Semiconductor Plant
The Indian government has approved a $336 million investment by Crystal Matrix to build the country’s first commercial GaN‑based microLED and miniLED fab in Gujarat’s Dholera zone. The integrated facility will produce 6‑inch wafers and assemble display modules, targeting a yearly...
GaN-on-Silicon HEMTs for Tomorrow's Handsets?
A collaborative team from A*STAR, NTU and Soitec has demonstrated GaN‑on‑silicon HEMTs that combine high power‑added efficiency, high power density and low‑noise performance, positioning them as a potential replacement for GaAs HBTs in RF front‑end modules of future smartphones. The...
GaN: Boosting Optical Power Converter Efficiency
Nichia has demonstrated a gallium‑nitride (GaN) optical power converter that exceeds 60 percent power‑conversion efficiency, a leap from the previous 43 percent benchmark. The device uses a high‑power LED‑style epitaxial structure with 60 In₀.₁₂Ga₀.₈₈N/GaN quantum‑well pairs and a flip‑chip design on an...
Wolfspeed Q3 in Line with Guidance
Wolfspeed reported Q3 FY2026 revenue of about $150 million, matching the midpoint of its guidance range. GAAP gross margin was –27 percent and net loss $120 million, while adjusted EBITDA was –$62 million. The company refinanced roughly $476 million of first‑lien debt, cutting total debt...
Navitas Revenue Grows 18% in Q1
Navitas Semiconductor posted Q1 2026 revenue of $8.6 million, an 18% sequential increase, as high‑power GaN and SiC markets now account for the bulk of sales and grew roughly 35% year‑over‑year. GAAP gross margin remained negative at 9.3%, while non‑GAAP margin edged...
Veeco Announces InP Tool Orders Worth over $250m
Veeco Instruments disclosed more than $250 m in orders for its Spector ion‑beam deposition, Lumina MOCVD and WaferEtch wet‑processing systems. The orders target InP laser production used in silicon‑photonic transceivers and are slated for delivery beginning in 2026, with a steep...
QuantumDiamonds Deploys Tool at Taiwanese Test House
QuantumDiamonds GmbH has deployed its QDm.1 quantum‑sensing system at Integrated Service Technology (iST) in Hsinchu, Taiwan, marking the first Asian installation of the technology. The system provides non‑destructive, high‑resolution 3D imaging of current pathways in advanced chip architectures, including 2.5D/3D...
The Power Market: Three Applications, One Ecosystem
IDTechEx projects the global power electronics market to surpass $65 billion by 2036, driven by a 10% CAGR fueled primarily by data‑center expansion and electric‑vehicle (EV) adoption. Silicon IGBTs remain prevalent, but wide‑bandgap (WBG) devices—especially SiC MOSFETs—are set to dominate EV...
Aixtron Figures Show "Clear Improvement in Market Dynamics"
German semiconductor equipment maker Aixtron reported a strong Q1 2026, with order intake of €171.4 million (≈$187 million), a 30% year‑over‑year increase driven largely by optoelectronics demand that accounted for almost 70% of orders. Revenue was €59.4 million (≈$64.7 million), in line with guidance, while...
X-FAB Q1 Shows Strong Wide-Bandgap Growth
X‑FAB reported Q1 2026 revenue of $195.6 million, a modest 4% YoY decline, while its wide‑bandgap segment surged. SiC wafer shipments jumped 195% YoY to 14,300 units and wide‑bandgap revenue rose 152% YoY to $15.1 million. Microsystems achieved an all‑time‑high $33.7 million, up 42%...
AXT Raises over $630m to Increase InP Capacity
AXT, a compound semiconductor wafer maker, completed an underwritten public offering that raised roughly $632.5 million, including a $82.5 million over‑allotment option. The company’s share price jumped more than 5,000% in the past year, reaching $69.24. Proceeds will fund its Beijing Tongmei...
IQE Announces £81m Investment Led by Macom
IQE plc announced a strategic £81 million (approximately $103 million) investment led by Macom Technology and existing shareholders. The cash will be used to retire bank debt, redeem loan notes and strengthen the balance sheet, ending the company’s strategic review and removing...
Contact Interaction Boosts Perovskite PV Efficiency and Stability
Researchers at Korea University and the University of Surrey introduced a contact‑triggered cationic interaction (CCI) method that aligns cations when two perovskite films touch, reorganising the crystal lattice throughout the absorber layer. The approach lifted certified power‑conversion efficiency to 25.61%...
Bosch Launches 3rd Generation SiC MOSFETs
Bosch unveiled its third‑generation silicon‑carbide (SiC) MOSFETs, featuring a dual‑channel trench architecture that cuts specific on‑resistance by 20%, thins the die by 40%, and raises short‑circuit withstand capability by roughly 10%. The redesign also supports 200 mm wafer production, boosting chips...
Aeluma Wins NASA Funding for QD Laser Project
US semiconductor firm Aeluma has been awarded NASA non‑dilutive funding to accelerate commercialization of its integrated quantum dot (QD) laser platform. The technology integrates QD lasers directly onto silicon, addressing the longstanding on‑chip optical gain limitation of silicon photonics while...
Seeing Clearly Even in the Fog
Korean researchers led by Jong‑Soo Lee have created a next‑generation short‑wave infrared (SWIR) image sensor that fuses Ag₂Te quantum dots with an MoS₂ 2D semiconductor. The hybrid architecture leverages photodoping at the material interface to deliver a responsivity of 7.5 × 10⁵ A/W...
InPHRED Closes $4M Seed Round
InPHRED, a US‑based photonics startup, closed a $4 million seed round to fast‑track commercialization of its patented nanoporous InP DBR technology. The funding will support development of short‑wave infrared (SWIR) VCSELs, digital‑health prototype validation, and expansion of its foundry and ODM...
A New Approach for 10 kV GaN
Researchers at Ariona State University have introduced a plasma‑based edge‑termination technique that removes etching and passivation steps for 10 kV GaN power devices. The method creates resistive regions in the top p‑GaN layer using hydrogen plasma, yielding a more uniform electric...
Unifying III-Vs and Silicon with an RF Interposer
imec unveiled a second‑generation 300 mm RF silicon interposer that bridges silicon logic with III‑V power devices such as InP and GaN. The platform uses DuPont’s low‑loss XP80 polymer and three copper redistribution layers to deliver record‑low insertion loss—0.30 dB/mm at 140 GHz...
Diode Improvements Drive Fibre Laser Growth
Advances in GaAs diode technology have slashed the $/Watt cost of industrial fibre lasers, fueling a market that now exceeds $23 billion annually. The superior efficiency and reliability of fibre lasers have displaced CO₂ and Nd:YAG systems across metal marking, cutting...
Accelerating GaN-on-Silicon RF Power Amplification
Researchers at Nanyang Technological University and A*STAR have demonstrated a GaN‑on‑silicon HEMT that delivers 0.67 W mm⁻¹ output at 123 GHz using a 10 V drain bias, marking the first power‑amplification result beyond 100 GHz for this platform. The device employs a 5 nm AlN barrier,...
Asymmetry Spawns Superior SiC Superjunctions
Researchers at Rohm have unveiled a unified analytical framework for silicon‑carbide (SiC) superjunction devices that incorporates crystal‑axis impact‑ionisation anisotropy and arbitrary geometric asymmetry. By tuning the width and doping of n‑ and p‑type pillars, the asymmetric semi‑superjunction design reduces specific...
Stress-Tested, Future-Ready GaN
Infineon is scaling lateral GaN HEMTs that combine ultra‑low on‑state resistance with high breakdown voltage, leveraging GaN’s 3.44 eV bandgap and high electron mobility. The company’s reliability program adds accelerated lifetime tests, wafer‑level DHTOL screening and extensive statistical analysis to exceed...
Dylan James Scientific Signed as K-Space European Representative
k‑Space has appointed Dylan James Scientific as its new European sales and service representative for thin‑film semiconductor metrology tools. The partnership follows the retirement of long‑time distributor RTA and includes on‑site technical training for DJS engineers. k‑Space’s tools are deployed...
Scientists Develop Three-in-One Diode
Researchers at the University of Science and Technology of China have unveiled a GaN‑based PN junction photodiode that simultaneously handles photosensing, memory storage, and processing. By inserting an n‑AlGaN charge‑storage layer, the device can switch among three functional modes using...
Marktech Launches High Power 280nm UVC LEDs
Marktech Optoelectronics has introduced a family of high‑power 280 nm UVC LEDs available in single‑, two‑ and four‑chip formats. The devices deliver wall‑plug efficiencies up to 7% and are rated for more than 15,000 hours at the L70 degradation point. By...
Riber Delivers Strong Earnings Growth in 2025
Riber posted 2025 full‑year results showing a modest 2% dip in revenue to €40.3 million (about $44 million) but a 27% jump in net income to €5.2 million ($5.7 million). The company’s operating margin improved to 13% of sales, aided by a favorable product...
Japanese Team Achieves 2 Μm-Band PCSEL Laser Oscillation
Asahi Kasei Microdevices (AKM) and Kyoto University have demonstrated laser oscillation in a 2 μm-band photonic crystal surface‑emitting laser (PCSEL). The breakthrough showcases PCSEL’s ability to deliver high directionality and ultra‑narrow linewidth in a compact infrared source. By operating at 2 μm,...
QuinAs Links Memory Device Physics to AI Performance
QuInAs Technology has published research linking its ULTRARAM compound‑semiconductor memory device directly to AI system performance. The paper introduces a physics‑based compact modelling framework that captures resonant tunnelling and floating‑gate dynamics, enabling hardware‑aware benchmarking of ULTRARAM as a synaptic element...
Wolfspeed: The 10 kV SiC MOSFET
Wolfspeed has launched the world’s first commercial 10 kV SiC MOSFET, delivered as a bare die. The device targets high‑voltage motor drives, electrical infrastructure, and niche markets such as mining and nuclear‑fusion plasma generation. Compared with the incumbent 6.5 kV silicon IGBT,...
Researchers Demonstrate Megawatt-Class Ga₂0₃ Module
A research team led by the University of Hong Kong has built a megawatt‑class gallium oxide (Ga₂O₃) power module that can pulse‑switch continuously at 1,000 V and 1,000 A. The device uses a novel junction‑side cooling architecture with a high‑permittivity interface, cutting...
Light Bends Perovskite Crystal Lattice
Researchers at UC Davis have demonstrated that halide perovskite crystals undergo rapid, reversible lattice distortions when illuminated, a phenomenon termed photostriction. Using laser excitation and X‑ray probing, the team showed the effect is tunable by composition, light wavelength, and intensity,...
Sivers Announces 5G/6G ICs
Sivers Semiconductors has launched the Daybreak 7‑15 GHz beamforming ICs, now generally available for emerging 5G‑Advanced and 6G FR3 applications and defense arrays. The chips deliver industry‑leading broadband transmit power, high efficiency and a low receiver noise figure, while supporting external...
£10.4m UK Project Will Grow Next-Gen Materials
The UK’s Engineering and Physical Sciences Research Council has awarded £10.4 million to a five‑year EXPRESS programme led by the Universities of Warwick and Southampton. The project will develop electrochemical electrodeposition techniques, guided by bespoke precursor chemistry, to grow high‑quality transition...
Silvaco Announces SiC Partnership with APEC
Silvaco Group announced an expanded strategic partnership with Taiwan‑based Advanced Power Electronics Corp. (APEC) to deepen the use of its Victory Device, Gateway, and SmartSpice solutions. APEC will deploy these tools across its silicon and silicon‑carbide (SiC) product lines, aiming...
Onsemi Powers Sineng's Solar and Energy Storage Systems
Onsemi’s latest hybrid power integrated modules, combining FS7 IGBTs with EliteSiC diodes in an F5BP package, have been selected for Sineng Electric’s next‑generation 430 kW liquid‑cooled string energy storage system and its 320 kW utility‑scale solar inverter. The modules deliver up to...
EPC Space Adds Half-Bridge Buck Platforms
EPC Space introduced two new eGaN half‑bridge buck evaluation boards, the EPC7C010 and EPC7C011, targeting aerospace and industrial power applications. The EPC7C010 delivers 100 V/20 A at up to 94.7% efficiency, while the EPC7C011 offers 200 V/10 A with a peak 96.6% efficiency. Both...
Audi Q3 Now Comes with Adaptive Projection Lighting
Audi equips the new Q3 with AMS Osram’s EVIYOS HD25 micro‑LED matrix, a digital lighting system containing over 25,000 individually addressable pixels. The solution modulates light in real time using sensor data, projecting lane‑keeping cues, blind‑spot alerts, ice warnings and construction‑zone...
Unlocking 29.76% Efficiency for Perovskite Tandems
A Chinese research team introduced a colloidal chemistry approach that synchronises the crystallisation of wide‑bandgap and narrow‑bandgap subcells in all‑perovskite tandem solar cells, achieving a record 29.76% power conversion efficiency (PCE). The strategy employs graded carboxylate modulators—tartrate for the WBG...
UK Semiconductor Centre Appoints Two New Directors
The UK Semiconductor Centre (UKSC) has hired Martin O’Sullivan as Director of Investment and Steve Taylor as Director of Strategic Marketing. O’Sullivan, a PhD‑trained semiconductor physicist with a background in equity research and capital markets, will streamline investor relations and...
NextGen Nano Plans £300m Agrivoltaics Programme
NextGen Nano Limited announced a £300 million agrivoltaics programme to pilot its transparent organic photovoltaic film, PolyPower, in West Africa. The flexible, 85 percent efficient panels will be integrated into greenhouse and tunnel structures to grow nutrient‑dense crops while generating off‑grid renewable...
Tiny Laser Array Could Offer Faster, Greener Indoor Wireless
British researchers have built a sub‑millimetre chip that integrates a 5 × 5 infrared VCSEL array with custom beam‑shaping optics, creating a compact optical wireless transmitter. Individual lasers deliver 13‑19 Gbps, and together they achieve a record‑breaking 362.7 Gbps over a two‑metre free‑space link....