Power Corner: IDEAL’s SuperQ Tapping Si’s Potential Beyond Superjunction
iDEAL Semiconductor unveiled SuperQ, a silicon MOSFET architecture that replaces traditional superjunction P‑N pillars with an ultra‑thin high‑K dielectric in high‑aspect‑ratio trenches. This charge‑compensation redesign shrinks the blocking region to as little as 5% of the die, freeing silicon for conduction and delivering lower on‑resistance for 60 V‑1,200 V devices. SuperQ leverages CMOS‑compatible atomic‑layer deposition and trench etching, enabling production in standard fabs and targeting motor drives, automotive, industrial and AI markets. The company positions the technology as a cost‑performance bridge rather than a direct challenger to wide‑bandgap GaN or SiC solutions.
Rethinking Superjunction’s Charge-Compensation Architecture with SuperQ
iDEAL Semiconductor’s SuperQ technology replaces the traditional p‑type pillars in superjunction MOSFETs with a nanometer‑thin high‑k dielectric film, reclaiming up to 95% of the silicon cross‑section for conduction. This asymmetric charge‑compensation architecture reduces specific on‑resistance while preserving high blocking voltages...
Samtec Expands Compact Power Interconnect Portfolio
Samtec has broadened its mPOWER ultra‑micro power interconnect line by adding through‑hole PCB termination options for vertical and right‑angle connectors. The new UMPS, UMPT and UMPT‑RA variants improve mechanical strength, making them better suited for vibration‑prone industrial, military, and aerospace...
Kensington Boosts Charging Efficiency with New GaN Products
Kensington has broadened its USB‑C gallium‑nitride charging line with a 70W three‑port adapter, a 140W four‑port adapter, and a 240W USB‑C to USB‑C cable. The GaN‑based devices deliver high‑speed power while staying compact and cool, thanks to superior efficiency over...
Power Corner: Texas Instruments’ Nikhil Jotwani on Smarter, Safer Automotive BMS
Texas Instruments’ automotive BMS manager Nikhil Jotwani discussed how modern battery‑management systems are evolving to improve safety and performance in electric vehicles. He highlighted electrochemical impedance spectroscopy (EIS) as a diagnostic that reveals state‑of‑health, aging and lithium‑plating, offering deeper insight...
Arrow Electronics World 2026: Geopolitics, AI at the Edge, and 100+ Exhibitors Come to Parma
Arrow Electronics World 2026 will convene on June 18 in Parma, Italy, bringing together engineers, buyers and manufacturers for a one‑day industry conference. The event occupies a 17,000‑m² exhibition hall with more than 100 booths showcasing semiconductors, connectors, power and...
Magnachip Launches 8th-Gen 12V BatteryFETs
Magnachip Semiconductor has launched two 8th‑generation 12 V ultra‑low Rds(on) MOSFETs aimed at smartphone battery protection circuits. One part is already in mass production for a major global handset maker, showcasing a more than 50% reduction in on‑resistance and up to...
Power Corner: Renesas’s Grid-to-Core Strategy for 800 V Data Center Power Architecture
Renesas is promoting a grid‑to‑core power architecture that moves data‑center power delivery from traditional side‑car racks to a unified 800 V DC bus using solid‑state transformers. The approach combines GaN‑based Vienna rectifiers, an LLC DCX isolated DC‑DC platform, and matrix transformers...
Exploring the Potential for a Buried Grid
Industry leaders are increasingly evaluating underground utilities as a climate‑resilient alternative to exposed power lines and renewable‑energy infrastructure. Burying cables, pipes and other assets can extend service life to 100‑150 years, protect against extreme weather and free surface land for...
D-Mode GaN Bidirectional Switches Reshape Power Conversion Topologies
Renesas introduced the TP65B110HRU, a 650 V, 110 mΩ D‑mode GaN bidirectional switch that integrates two low‑voltage MOSFETs in a single TOLT package. The device conducts and blocks current in both directions, eliminating the need for back‑to‑back MOSFET or IGBT pairs. This...
Vishay Expands Power DFN Portfolio with Ultrafast Rectifiers
Vishay Intertechnology has added 16 new FRED Pt® ultrafast rectifiers to its Power DFN line, housed in the compact DFN6546A package and rated at 200 V with 6 A‑15 A currents. Both commercial‑grade and AEC‑Q101‑qualified automotive versions are available, offering a 10% lower...
Power Corner: Ventiva CEO on Data Center’s Thermal Orphan Problem
Ventiva’s CEO Carl Schlachte explained how the company’s solid‑state electrohydrodynamic (EHD) ionic cooling modules address the growing "thermal orphan" problem in AI servers. The rectangular, 4‑5 mm‑high devices generate airflow without moving parts, allowing them to be stacked and positioned in...
AI Data Center Power: How MPS Is Advancing System-Level Power Delivery
Monolithic Power Systems (MPS) says AI‑driven data centers are nearing 1 MW per rack, forcing a shift from component‑level tweaks to system‑level power delivery. The company highlights high‑voltage DC (HVDC) distribution and Z‑axis power modules placed directly under processors as ways...
ST Expands Analog Portfolio with High-Accuracy Op Amps
STMicroelectronics has launched the TSB192 dual operational amplifier, a high‑accuracy part that works across a 4 V to 36 V supply range. It delivers a typical 20 µV input offset and 100 nV/°C drift, while consuming only 1.9 mA per channel. The device offers an...
GaN Breaks the 250 W Barrier in Flyback Power Supplies
Power Integrations has launched the TOPSwitchGaN family, extending the single‑ended flyback converter’s practical power ceiling from the traditional 200‑250 W limit to 440 W. By replacing silicon MOSFETs with gallium‑nitride HEMTs, the new devices achieve lower on‑resistance, reduced gate charge and output...