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Large‐Area Bi2O2Se Nanosheets With Enhanced Optoelectronic Performance for Flexible Electronics

Researchers have demonstrated atmospheric‑pressure chemical vapor deposition (APCVD) of large‑area Bi2O2Se nanosheets, achieving domain sizes up to 0.4 mm. The nanosheets exhibit high carrier mobility—110 cm² V⁻¹ s⁻¹ at room temperature and over 3700 cm² V⁻¹ s⁻¹ at 2.3 K—while maintaining structural integrity under repeated bending. Detailed experiments and COMSOL‑based simulations elucidate the adatom diffusion mechanisms that enable such growth. The work positions APCVD‑grown Bi2O2Se as a scalable platform for flexible electronic and optoelectronic devices.