600-V Superjunction MOSFET Targets EVs, SMPS, and Solar Inverters
Alpha & Omega Semiconductor (AOS) launched the AOTL037V60DE2, a 600‑V superjunction MOSFET built on its new MOS E2 platform. The device offers a low 37 mΩ on‑resistance, a robust intrinsic body diode with reduced reverse‑recovery charge, and a wide safe operating area, making it suited for soft‑switching topologies such as PFC and inverter circuits. Packaged in a TOLL case, it is priced at $5.58 per thousand units with a 16‑week lead time, targeting EV powertrains, SMPS, solar inverters, and data‑center power systems.
Rugged 600-V Gate Drivers Come in Multiple Configurations
Microchip Technology has launched a new family of 600‑V gate drivers, offering twelve devices across half‑bridge, high‑side/low‑side, and three‑phase configurations. The drivers deliver fast switching with current‑drive capabilities ranging from 600 mA to 4.5 A and operate on 3.3‑V logic, simplifying integration...
Practical Design Guidelines for Atom-Thin Oxide Transistors Enable Reliable 3D Chip Integration
Researchers at National Taiwan University introduced a unified analytical framework that captures how channel thickness, trap states, interface quality, and surface roughness jointly dictate the performance of atom‑thin indium‑oxide and tungsten‑doped indium‑oxide transistors. The model accurately reproduces I‑V characteristics for...
Expanding Storage Capacity with Smart Gate Semiconductor Technology
KAIST researchers have unveiled a "smart gate" semiconductor structure that uses a novel boron oxynitride (BON) tunneling layer to overcome scaling limits in 3D V‑NAND flash memory. The asymmetric energy‑barrier design accelerates erase operations by up to 23‑fold while maintaining...
Jmem Tek Joins GlobalFoundries Ecosystem to Expand Post-Quantum Security Solutions
Jmem Tek has joined GlobalFoundries’ GlobalSolutions™ Ecosystem as an official IP Network Partner, bringing its proprietary Physical Unclonable Function (PUF) and post‑quantum cryptography (PQC) IP to GlobalFoundries customers worldwide. The partnership gives semiconductor designers access to silicon‑proven hardware root‑of‑trust, secure...
CEA-Leti and Fraunhofer IPMS Validate Wafer Exchange for Ferroelectric Memory Materials Within the FAMES Pilot Line
CEA‑Leti and Fraunhofer IPMS have completed the first exchange of ferroelectric memory wafers within the EU‑funded FAMES Pilot Line, proving a shared platform for advanced embedded non‑volatile memory development. The exchange used 300 mm CMOS cleanrooms to process hafnium‑zirconium oxide (HZO)...