Today's Semiconductors Pulse
Analyst says Intel’s >200 P/E valuation is unjustified amid AI hype
Analyst Gil Luria argues Intel’s valuation, trading above a 200‑times price‑to‑earnings multiple, is out of sync with the AI cycle and may be overstating a multi‑year boom. He points to Nvidia, AMD, Broadcom and Micron, which trade at substantially lower multiples and offer stronger near‑term upside. Intel reported Q1 FY2026 revenue of $13.58B, up 7.2 % year‑over‑year, but execution risk remains high.
Also developing:
By the numbers: SiPearl raises $37M Series A
Mitsubishi, Rohm, Toshiba To Merge Power Semi Businesses
Mitsubishi Electric, Rohm and Toshiba Electronic Devices & Storage have signed a memorandum of understanding with Japan Industrial Partners and TBJ Holdings to explore merging their power‑semiconductor businesses. The proposed joint venture would combine silicon, gallium‑nitride (GaN) and silicon‑carbide (SiC) product lines, aiming to create a stronger player in a market dominated by global rivals. The talks follow a 2023 joint plan submitted to Japan’s METI to secure domestic power‑device supply. No transaction terms have been finalized, and discussions remain preliminary.
Which Foundries Are Making Which AI Chips?
Jon Peddie Research tracks 133 active AI processor suppliers, with major players like Nvidia, AMD, Broadcom, Google and a host of startups operating fabless. Nvidia’s newest Rubin GPU is manufactured by TSMC using its N3P process, while its Groq 3...
600-V Superjunction MOSFET Targets EVs, SMPS, and Solar Inverters
Alpha & Omega Semiconductor (AOS) launched the AOTL037V60DE2, a 600‑V superjunction MOSFET built on its new MOS E2 platform. The device offers a low 37 mΩ on‑resistance, a robust intrinsic body diode with reduced reverse‑recovery charge, and a wide safe operating area,...
GlobalFoundries Files Patent Suit Against Tower
GlobalFoundries has initiated legal actions against Tower Semiconductor in both the U.S. International Trade Commission and the Western District of Texas. The complaints allege that Tower is infringing on eleven of GF’s U.S. patents covering high‑performance analog, RF, and silicon‑photonics...
Rugged 600-V Gate Drivers Come in Multiple Configurations
Microchip Technology has launched a new family of 600‑V gate drivers, offering twelve devices across half‑bridge, high‑side/low‑side, and three‑phase configurations. The drivers deliver fast switching with current‑drive capabilities ranging from 600 mA to 4.5 A and operate on 3.3‑V logic, simplifying integration...
Cisco, Kioxia, Sandisk, Solidigm Invest $2.5B in Nanya
Cisco, Kioxia, Sandisk and Solidigm have collectively invested about $2.5 billion in Taiwan’s Nanya Technology through a private‑placement share offering. The capital will fund expansion of Nanya’s DRAM fabrication capacity, addressing a global memory shortage. Each investor also signed separate DRAM...
Tower Acquires 300mm Fab From JV Partner in Japan
Tower Semiconductor will acquire full ownership and operational control of the 300mm Fab 7 in Uozu, Japan, from its joint‑venture partner Nuvoton. The 65nm facility produces RF‑SOI, power‑management ICs, sensors and silicon‑photonics chips, and Tower aims to quadruple its capacity...
Advanced Packaging in the Semiconductor Industry
Advanced packaging is reshaping the semiconductor sector by enabling higher transistor density and heterogeneous integration through 2.5D, 3D, and fan‑out wafer‑level techniques. The global market is projected to exceed $30 billion by 2028, driven by demand for AI, high‑performance computing, and...
Practical Design Guidelines for Atom-Thin Oxide Transistors Enable Reliable 3D Chip Integration
Researchers at National Taiwan University introduced a unified analytical framework that captures how channel thickness, trap states, interface quality, and surface roughness jointly dictate the performance of atom‑thin indium‑oxide and tungsten‑doped indium‑oxide transistors. The model accurately reproduces I‑V characteristics for...
Expanding Storage Capacity with Smart Gate Semiconductor Technology
KAIST researchers have unveiled a "smart gate" semiconductor structure that uses a novel boron oxynitride (BON) tunneling layer to overcome scaling limits in 3D V‑NAND flash memory. The asymmetric energy‑barrier design accelerates erase operations by up to 23‑fold while maintaining...
Jmem Tek Joins GlobalFoundries Ecosystem to Expand Post-Quantum Security Solutions
Jmem Tek has joined GlobalFoundries’ GlobalSolutions™ Ecosystem as an official IP Network Partner, bringing its proprietary Physical Unclonable Function (PUF) and post‑quantum cryptography (PQC) IP to GlobalFoundries customers worldwide. The partnership gives semiconductor designers access to silicon‑proven hardware root‑of‑trust, secure...
CEA-Leti and Fraunhofer IPMS Validate Wafer Exchange for Ferroelectric Memory Materials Within the FAMES Pilot Line
CEA‑Leti and Fraunhofer IPMS have completed the first exchange of ferroelectric memory wafers within the EU‑funded FAMES Pilot Line, proving a shared platform for advanced embedded non‑volatile memory development. The exchange used 300 mm CMOS cleanrooms to process hafnium‑zirconium oxide (HZO)...