Semiconductors News and Headlines
Semiconductors News and Headlines
Semiconductors Pulse
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Applied Optoelectronics Inc. (AOI) secured a volume order exceeding $53 million from a major hyperscale customer for 800‑gigabit single‑mode data‑center transceivers. The order supports AI‑driven GPU clusters and will be shipped between Q2 and mid‑Q3 2026 after product qualification. AOI’s CEO highlighted that 800G technology delivers higher bandwidth, power efficiency, and lower cost per bit, reducing upgrade cycles. The deal follows a recent 1.6‑terabit order from the same client, indicating a broader rollout across multiple regions.
Nanya Technology raised roughly $2.5 billion via share sales and private placements to expand its DRAM production capacity. Kioxia invested T$15.6 billion for a 2 % equity stake and a long‑term DRAM supply agreement, while SanDisk committed T$31 billion and signed a multi‑year supply...
Samsung Electronics' foundry division announced its entry into the silicon photonics market, unveiling a roadmap that moves from photonic integrated circuits (PICs) this year to optical engines in 2027 and turnkey co‑packaged optics (CPO) by 2029, with a next‑generation CPO...
LG Chem announced a plan to double its semiconductor and automotive electronics materials revenue to 2 trillion won (about $1.5 billion) by 2030, up from roughly 1 trillion won today. The company created a new advanced R&D unit under its Advanced Materials Research Institute to...
Researchers at the University of Science and Technology of China have created a single semiconductor diode that simultaneously senses light, stores data and performs processing. By inserting an aluminum‑gallium‑nitride layer into a GaN p‑n junction, the device can switch among...
NIST researchers have introduced hydroxide catalysis bonding (HCB) as a new packaging method for photonic integrated circuits, replacing traditional polymer adhesives with a glass‑like inorganic bond. The HCB‑packaged chips survived cryogenic temperatures, intense ionizing radiation, high‑vacuum conditions, and rapid thermal...
Researchers at UC Santa Barbara and UMass Amherst have built a chip‑scale, visible‑light Brillouin laser that can be frequency‑stabilized to the narrow strontium optical‑clock transition and used to drive a trapped‑ion qubit. The integrated laser, paired with an on‑chip coil...
Rogue Valley Microdevices (RVM) announced the launch of MEMS Design Services, a foundry‑flexible offering that supports customers from concept through production‑ready design. The service provides three engagement models—Design only, Design with technology transfer, and full Design‑and‑Fabricate within RVM’s own fab—allowing...
The UK’s EXPRESS programme, a five‑year, £10.4 million EPSRC‑funded initiative led by the Universities of Warwick and Southampton, will develop next‑generation transistor and optoelectronic devices using transition metal dichalcogenides (TMDCs). Researchers will combine electrochemical deposition with bespoke precursor chemistry to grow...
STMicroelectronics introduced the Stellar P3E, an automotive microcontroller that embeds a Neural‑ART accelerator for on‑chip AI inference. The MCU consolidates multiple ECUs, features six Cortex‑R52+ cores up to 500 MHz, and includes high‑density xMemory. By offloading machine‑learning tasks to the NPU, the...
Dean Technology has launched two new high‑voltage diode families, the FH and SH series, expanding its medium‑power portfolio. The FH series delivers a reverse‑recovery time as low as 40 ns, a substantial improvement over the legacy 2CL line’s 100 ns, while supporting...
Alpha & Omega Semiconductor (AOS) launched the AOTL037V60DE2, a 600‑V superjunction MOSFET built on its new MOS E2 platform. The device offers a low 37 mΩ on‑resistance, a robust intrinsic body diode with reduced reverse‑recovery charge, and a wide safe operating area,...
Microchip Technology has launched a new family of 600‑V gate drivers, offering twelve devices across half‑bridge, high‑side/low‑side, and three‑phase configurations. The drivers deliver fast switching with current‑drive capabilities ranging from 600 mA to 4.5 A and operate on 3.3‑V logic, simplifying integration...
Researchers at National Taiwan University introduced a unified analytical framework that captures how channel thickness, trap states, interface quality, and surface roughness jointly dictate the performance of atom‑thin indium‑oxide and tungsten‑doped indium‑oxide transistors. The model accurately reproduces I‑V characteristics for...
KAIST researchers have unveiled a "smart gate" semiconductor structure that uses a novel boron oxynitride (BON) tunneling layer to overcome scaling limits in 3D V‑NAND flash memory. The asymmetric energy‑barrier design accelerates erase operations by up to 23‑fold while maintaining...
Jmem Tek has joined GlobalFoundries’ GlobalSolutions™ Ecosystem as an official IP Network Partner, bringing its proprietary Physical Unclonable Function (PUF) and post‑quantum cryptography (PQC) IP to GlobalFoundries customers worldwide. The partnership gives semiconductor designers access to silicon‑proven hardware root‑of‑trust, secure...
CEA‑Leti and Fraunhofer IPMS have completed the first exchange of ferroelectric memory wafers within the EU‑funded FAMES Pilot Line, proving a shared platform for advanced embedded non‑volatile memory development. The exchange used 300 mm CMOS cleanrooms to process hafnium‑zirconium oxide (HZO)...
