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New Nitride Magnets Let Electricity Flip Hidden Spin Patterns

Researchers have identified wurtzite‑type nitride compounds MnSiN₂ and MnGeN₂ as room‑temperature multiferroic altermagnets. First‑principles calculations show that reversing their ferroelectric polarization also reverses the non‑relativistic spin splitting, providing electric control of hidden spin patterns. The intrinsic switching barriers are 0.96 eV and 0.46 eV per formula unit, but partial substitution of Mn with Zn or Mg can lower the barrier while preserving G‑type antiferromagnetic order. The work maps a computational pathway toward electrically switchable spintronic materials without net magnetization.